Degradation of vertical GaN-on-GaN fin transistors: Step-stress and constant voltage experiments
نویسندگان
چکیده
منابع مشابه
Role of stress voltage on structural degradation of GaN high-electron-mobility transistors
Please cite this article in press as: Joh J et al. R Reliab (2010), doi:10.1016/j.microrel.2010.08.0 In GaN high-electron-mobility transistors, electrical degradation due to high-voltage stress is characterized by a critical voltage at which irreversible degradation starts to take place. Separately, cross-sectional TEM analysis has revealed significant crystallographic damage for severely degra...
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ژورنال
عنوان ژورنال: Microelectronics Reliability
سال: 2018
ISSN: 0026-2714
DOI: 10.1016/j.microrel.2018.06.044